Cleavage of Lateral Epitaxial Films for Transfer (CLEFT)

Description

a process for making inexpensive Gallium Arsenide (GaAs) photovoltaic cells in which a thin film of GaAs is grown atop a thick, single-crystal GaAs (or other suitable material) substrate and then is cleaved from the substrate and incorporated into a cell, allowing the substrate to be reused to grow more thin-film GaAs.